Fermi-level depinning achieved by high-work-function Au1-xSex alloy contacts for high-performance p-type WSe2 transistors
Wanying Li, Yipu Xia, Yuanhao Kou, Hai Wang, Shaogang Xu, Yujia Deng, Chun Kit Ng, Tianyuan Chen, Sujuan Ding, Lin-Yun Huang, Fanqi Wei, Fangyuan Zheng, Ni Yang, Wanqing Meng, Chengdong Yao, Dong-Keun Ki, Xuming Zhang, Mingxin Huang, Hu Xu, Bo Wang, Chuanhong Jin, Junqiu Zhang, Maohai Xie, Lain-Jong · 2026
Read Fermi-level depinning achieved by high-work-function Au1-xSex alloy contacts for high-performance p-type WSe2 transistors by Wanying Li, Yipu Xia, Yuanhao Kou, Hai Wang, Shaogang Xu, Yujia Deng, Chun Kit Ng, Tianyuan Chen, Sujuan Ding, Lin-Yun Huang, Fanqi Wei, Fangyuan Zheng, Ni Yang, Wanqing Meng, Chengdong Yao, Dong-Keun Ki, Xuming Zhang, Mingxin Huang, Hu Xu, Bo Wang, Chuanhong Jin, Junqiu Zhang, Maohai Xie, Lain-Jong (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-13402654.txt.
Description
Li and co-authors solve, in 2026, the problem of making electrical contacts to p-type tungsten diselenide transistors. Depositing high-work-function metals damages the atom-thin semiconductor and pins the Fermi level. Their strategy grows a gold-selenium alloy contact by molecular beam epitaxy. Selenium goes down first, then gold converts it into Au1-xSex, with a work function of 5.8 electron volts, forming a van der Waals interface.
The alloy suppresses defect-induced and metal-induced gap states and hole-dopes the contacted monolayer, shrinking the Schottky barrier. Devices showed quasi-ohmic behavior with a contact resistance of 492 ohm-micrometers and an on-current of 385 microamps per micrometer. The on-off ratio topped ten to the eighth for a transistor with a 100-nanometer channel. The authors present the alloy contact as a scalable route to p-type two-dimensional electronics, the missing half of atom-thin circuits.
Catalog record
| CREATOR | Wanying Li, Yipu Xia, Yuanhao Kou, Hai Wang, Shaogang Xu, Yujia Deng, Chun Kit Ng, Tianyuan Chen, Sujuan Ding, Lin-Yun Huang, Fanqi Wei, Fangyuan Zheng, Ni Yang, Wanqing Meng, Chengdong Yao, Dong-Keun Ki, Xuming Zhang, Mingxin Huang, Hu Xu, Bo Wang, Chuanhong Jin, Junqiu Zhang, Maohai Xie, Lain-Jong |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 42 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |