Protocol for depositing transparent conductive Ta-doped SnO2 film by hollow cathode gas flow sputtering technology

Fangfang Huo, Manuel Hartig, Bertwin Bilgrim Otto Seibertz, Nivin Alktash, Ruslan Muydninov, Can Wang, Peng Gao, Bernd Szyszka · 2024

Read Protocol for depositing transparent conductive Ta-doped SnO2 film by hollow cathode gas flow sputtering technology by Fangfang Huo, Manuel Hartig, Bertwin Bilgrim Otto Seibertz, Nivin Alktash, Ruslan Muydninov, Can Wang, Peng Gao, Bernd Szyszka (2024) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-11666947.txt.

Description

Huo and co-authors give a step-by-step protocol for coating glass with a clear, conductive tin oxide film. The film is doped with tantalum to carry charge well. It shows low surface roughness, low resistance, and high carrier counts, making it a strong stand-in for standard clear conductors.

The method uses hollow cathode gas flow sputtering to lay the film down. Steps cover preparing and cleaning fresh float glass before coating. Later steps detail how to measure the film's light and electric traits. Full use notes point back to the team's earlier paper on this film.

Catalog record

CREATORFangfang Huo, Manuel Hartig, Bertwin Bilgrim Otto Seibertz, Nivin Alktash, Ruslan Muydninov, Can Wang, Peng Gao, Bernd Szyszka
YEAR2024
COLLECTIONPAPERS
FORMATTXT
FILE SIZE30 KB
VERSION1.0
LICENSECC BY 4.0
RIGHTSCC BY
SOURCEEurope PMC

Source: https://europepmc.org/articles/PMC11666947

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