Laser-assisted p-PANI/n-CdS/p-Si dual-heterojunction architecture for UV/Vis/NIR wavelength detection
Shahad Raji, Ethar Yahya Salih, Asaad A H AlZubaidi, Mohammed Haider Sami · 2026
Read Laser-assisted p-PANI/n-CdS/p-Si dual-heterojunction architecture for UV/Vis/NIR wavelength detection by Shahad Raji, Ethar Yahya Salih, Asaad A H AlZubaidi, Mohammed Haider Sami (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13617752.txt.
Description
Shahad Raji and three colleagues build a photodetector, a device that turns light into electrical signal, from a stack of three semiconductors: a conducting polymer called PANI, cadmium sulfide, and silicon. Laser methods deposit the cadmium sulfide and help coat the polymer, creating two independent junctions in one device. The design aims at detecting ultraviolet, visible, and near-infrared light with a single hybrid organic and inorganic structure.
Electrical tests showed rectifying behavior at both junctions, meaning current flows more easily one way than the other. Each junction peaked at a different color, one in blue light and one in green, while the silicon layer extended sensitivity into the near-infrared. Switching was fast, with rise and fall times under ninety milliseconds. After four weeks the device kept most of its original performance. The authors say this dual-junction synergy offers a route to compact multi-wavelength sensors.
Catalog record
| CREATOR | Shahad Raji, Ethar Yahya Salih, Asaad A H AlZubaidi, Mohammed Haider Sami |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 20 KB |
| LICENSE | https://creativecommons.org/licenses/by/3.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |