Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga2O3 via TMAH wet etching
Takayoshi Oshima · 2026
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Description
Takayoshi Oshima reports a 2026 study on carving fine trenches and fins in a crystal used for power devices. The crystal is a gallium oxide with a stated face and cut. Wet etching with a common base gave walls that were near vertical and very flat, a shape that is hard to get with wet methods alone.
Oshima first mapped how fast the side etch ran across a related face, and found the chosen cut among the fastest. The flat rate rose fast with heat, which points to a surface bound process. Near vertical cuts formed only when the etch window lined up with one stated direction. The wall tilt matched the angle that crystal math predicts.
Catalog record
| CREATOR | Takayoshi Oshima |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 20 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |