Phase-selective growth of GaS films by chemical vapor deposition
Stefano Dicorato, Maria Losurdo, Fabio Palumbo, Maria M. Giangregorio · 2026
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Description
Stefano Dicorato and co-authors grow thin films of gallium sulfide with control over crystal form, in work published in 2026. The material is a layered semiconductor that can stack in more than one form, and each form acts in its own way. They grow the films from a single source gas with pure hydrogen as the carrier.
By tuning pressure, flow, heat, and growth rate, they flip the films between two forms and between island growth and smooth layers. One set of settings gave even, high-grade films over a wide area. Other settings gave rough islands and weaker traits. The work maps how process choices shape the final film.
Catalog record
| CREATOR | Stefano Dicorato, Maria Losurdo, Fabio Palumbo, Maria M. Giangregorio |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 25 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |