Bandgap engineering and high-throughput defect dynamics in two-terminal CsGeI3-Si monolithic tandem solar cells
Sujata Singh, Gun Anit Kaur, Mamta Shandilya, Ajit Sharma, Pravin Kumar Singh · 2026
Read Bandgap engineering and high-throughput defect dynamics in two-terminal CsGeI3-Si monolithic tandem solar cells by Sujata Singh, Gun Anit Kaur, Mamta Shandilya, Ajit Sharma, Pravin Kumar Singh (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13547394.txt.
Description
Sujata Singh and co-authors simulated in 2026 a two-layer solar cell that stacks a lead-free perovskite on top of silicon to catch more of the spectrum than either material manages alone. The top layer uses a cesium germanium iodide perovskite, avoiding toxic lead, sandwiched between charge-selective layers of zinc oxide and copper oxide. The team swept thickness, doping, defect levels, and band gap in software to hunt for the best combination.
The optimized stack reached a simulated efficiency above 37 percent, past the ceiling for a single-layer cell, with strong current and voltage figures. Because the work is entirely computational, the numbers describe what the design could deliver if fabrication matches the model. The authors frame it as a route to higher output with a smaller carbon footprint.
Catalog record
| CREATOR | Sujata Singh, Gun Anit Kaur, Mamta Shandilya, Ajit Sharma, Pravin Kumar Singh |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 71443 |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |