Femtosecond Laser Two-Photon Absorption for Simulating Single-Event Effects and Defining the Safe Operating Area of SiC Power MOSFETs
Chenguang Zhang, Hong Yin, Liang Shi, Xuan Wen, Zheng Ma, Hanwu Jia · 2026
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Description
Chenguang Zhang and five colleagues show how laser pulses can stand in for cosmic rays when testing power transistors for space, in a 2026 study. Silicon carbide MOSFETs can burn out in a single radiation strike, yet heavy-ion beam tests are slow and costly. The team used femtosecond laser pulses absorbed in pairs inside a commercial 1200 volt device. They built a corrected formula that maps laser energy onto the ion scale, fixing the classic square law where it breaks at high intensity.
Three failure signs appeared as energy climbed: two kinds of leakage and full burnout. The burnout threshold settled near five hundred volts once the ion-equivalent dose passed a set level, well below the device rating. Their safe-area map marks voltages below two hundred as safe and those above six hundred as high risk. Laser results matched published ion data closely.
Catalog record
| CREATOR | Chenguang Zhang, Hong Yin, Liang Shi, Xuan Wen, Zheng Ma, Hanwu Jia |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 27 KB |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |