Charge-Trapping-Enhanced Resistive Switching and Charge Storage in Silk Fibroin–TiO2 Composite Memristors
Seungmin Song, JunHyeong Park, JungBeen Cho, Seyeon Tak, Taehun Kim, Kyungtaek Min, Sung-Nam Lee · 2026
Read Charge-Trapping-Enhanced Resistive Switching and Charge Storage in Silk Fibroin–TiO2 Composite Memristors by Seungmin Song, JunHyeong Park, JungBeen Cho, Seyeon Tak, Taehun Kim, Kyungtaek Min, Sung-Nam Lee (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13515718.txt.
Description
Seungmin Song and six colleagues build memory devices from silk protein in a 2026 materials study. Memristors store data as resistance states that persist without power, and silk fibroin suits versions meant to dissolve safely in the body. Pure silk versions leak current and hold their states poorly, though. The team mixed titanium dioxide nanoparticles into the silk film at four loadings, from none up to one percent by weight.
Adding the particles steadied the high-resistance state and cut leakage. Devices switched cleanly within one volt either way, with on-off current ratios around ten thousand to one hundred thousand. They survived one hundred switching cycles and held their states for the full test window. Charge storage also rose in the low-resistance state, which the team ties to filaments and particle-assisted effects at the interfaces.
Catalog record
| CREATOR | Seungmin Song, JunHyeong Park, JungBeen Cho, Seyeon Tak, Taehun Kim, Kyungtaek Min, Sung-Nam Lee |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 37478 |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |