Sputtered Piezoelectric AlN Thin Films: Parameter Optimisation, Deposition Challenges, and Emerging Perspectives—A Review
Rangaraajan Muralidaran, Paritosh Dubey, Kuldeep Singh Gour, Shuvam Pawar, Vinod Belwanshi, Jacopo Iannacci · 2026
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Description
Muralidaran and colleagues review how to deposit aluminum nitride, a piezoelectric material that generates voltage when squeezed, as thin films for electronics, in a 2026 survey of sputtering methods. Sputtering blasts a target with gas ions so atoms land on a surface as a coating. Aluminum nitride suits tiny mechanical devices and radio components because of its crystal alignment, fast sound speed, and compatibility with standard chip manufacturing.
The review weighs how sputtering power, nitrogen flow, substrate temperature, and target distance each affect crystal quality, noting the material's wide bandgap of about 6.2 electron volts. It also catalogs practical hardware troubles rarely admitted in print, including vacuum leaks, grounding faults, target wear, and drifting gas controllers. Looking ahead, the authors point to 6G radio, harsh-environment sensors, biomedical ultrasound, and energy harvesting for small devices. Pairing aluminum nitride with silicon carbide is proposed for hot, high-power settings.
Catalog record
| CREATOR | Rangaraajan Muralidaran, Paritosh Dubey, Kuldeep Singh Gour, Shuvam Pawar, Vinod Belwanshi, Jacopo Iannacci |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 34 KB |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |