Quantitative Infrared-to-Terahertz Nanospectroscopy of Semiconductors
Lukas Wehmeier, Zijian Zhou, Makoto Tsuneto, Heze Zhao, Stephanie N. Gilbert Corder, Hans A. Bechtel, Vladimir A. Martinez, Christopher C. Homes, D. N. Basov, Mengkun Liu, G. L. Carr · 2026
Read Quantitative Infrared-to-Terahertz Nanospectroscopy of Semiconductors by Lukas Wehmeier, Zijian Zhou, Makoto Tsuneto, Heze Zhao, Stephanie N. Gilbert Corder, Hans A. Bechtel, Vladimir A. Martinez, Christopher C. Homes, D. N. Basov, Mengkun Liu, G. L. Carr (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13495956.txt.
Description
Wehmeier and colleagues present a 2026 measurement method that reads key electrical traits of semiconductors at the nanoscale using infrared to terahertz light. Chip features are now only a few nanometers wide, yet the scattering rate of charge carriers, a trait that shapes device behavior, has been hard to measure at that scale.
Their synchrotron-based nanospectroscopy measures both carrier concentration and scattering rate with percent-level accuracy, at a resolution near ten nanometers. Tests on silicon with different doping levels matched established far-field methods in bulk checks. Near-field readings ran about 30 percent lower than far-field values, a gap the team links to surface depletion, where carriers thin out near the surface. The method opens all-optical study of such surface effects.
Catalog record
| CREATOR | Lukas Wehmeier, Zijian Zhou, Makoto Tsuneto, Heze Zhao, Stephanie N. Gilbert Corder, Hans A. Bechtel, Vladimir A. Martinez, Christopher C. Homes, D. N. Basov, Mengkun Liu, G. L. Carr |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 63 KB |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |