Gate-tunable mid-infrared electroluminescence from Te/MoS2 p-n heterojunctions
Shiyu Wang, Delang Liang, Zhi Zheng, Mingyang Qin, Yuchun Chen, Jie Sheng, Shula Chen, Lin Li, Changgan Zeng, Anlian Pan, Jinluo Cheng, Dong Sun · 2026
Read Gate-tunable mid-infrared electroluminescence from Te/MoS2 p-n heterojunctions by Shiyu Wang, Delang Liang, Zhi Zheng, Mingyang Qin, Yuchun Chen, Jie Sheng, Shula Chen, Lin Li, Changgan Zeng, Anlian Pan, Jinluo Cheng, Dong Sun (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13402784.txt.
Description
Shiyu Wang and co-authors build a mid-infrared light-emitting diode from a stack of tellurium and molybdenum disulfide that can be tuned live by a gate voltage. Mid-infrared emitters serve chemical sensing, thermal imaging, and free-space communication, but classic versions need rigid, lattice-matched crystals and resist chip integration. Two-dimensional materials promise an easier path, though stability and brightness have lagged.
Their van der Waals p-n junction emitted polarized light centered at 3.5 micrometers under forward bias at 25 kelvin, still glowing at 80 kelvin with lower intensity. A gate shifting the Fermi level in the MoS2 layer adjusted band alignment and injection, dimming or brightening output on command, while the color itself stayed put under varied bias and gating. The authors offer the stack as a base for integrated polarized mid-infrared photonics.
Catalog record
| CREATOR | Shiyu Wang, Delang Liang, Zhi Zheng, Mingyang Qin, Yuchun Chen, Jie Sheng, Shula Chen, Lin Li, Changgan Zeng, Anlian Pan, Jinluo Cheng, Dong Sun |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 49 KB |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |