Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim · 2026
Read Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices by Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13398144.txt.
Description
Hongseok Kim and colleagues review why hafnium oxide memory materials wake up, then wear out, under repeated switching. Their 2026 survey covers HfO2-based ferroelectrics, prized for fitting standard chip making and shrinking well. Unlike classic ferroelectrics, their effect comes from a fragile crystal phase that defects and processing easily disturb.
Two phases of life dominate: wake-up, where switching strengthens over early cycles, and fatigue, where it fades with heavy use. Oxygen vacancies drifting and interface defects evolving drive both, the authors argue. They gather proven strategies to tame the pair (doping, layer design, careful cycling) so endurance and reliability can meet what real memory chips demand.
Catalog record
| CREATOR | Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 137 KB |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |