Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing

Bohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L Hector, Ruomeng Huang · 2026

Read Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing by Bohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L Hector, Ruomeng Huang (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13336861.txt.

Description

Bohao Ding and colleagues merge two memory styles in one tiny device for brain-like computing in a 2026 study. Their nanoporous silica memristor can hold a state briefly or keep it long-term, switched simply by tuning the current limit. Clear ion paths inside the pores let filaments form and dissolve in a controlled way.

Used as a physical reservoir, the fleeting states processed signals while stable states served as readout weights. The system reached 93.7% accuracy on handwritten digit recognition in benchmark tests and over 88% accuracy when sorting normal from abnormal heartbeat patterns in ECG tests. One CMOS-friendly material doing both jobs could shrink low-power smart hardware.

Catalog record

CREATORBohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L Hector, Ruomeng Huang
YEAR2026
COLLECTIONPAPERS
FORMATTXT
FILE SIZE56262
LICENSEhttps://creativecommons.org/licenses/by/4.0
RIGHTSCC BY
SOURCEEurope PMC

Source: https://europepmc.org/article/MED/PMC13336861

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