Effect of Different Dopants on Dislocation Defects in VGF-InP and Inhibition Mechanisms
Hua Wei, Hongfei Gu, Bin Yang, Xiaoda Ye, Xingkai Zhao, Hanbao Liu, Feng Qiu, Jie Yang, Tinglong Liu · 2026
Read Effect of Different Dopants on Dislocation Defects in VGF-InP and Inhibition Mechanisms by Hua Wei, Hongfei Gu, Bin Yang, Xiaoda Ye, Xingkai Zhao, Hanbao Liu, Feng Qiu, Jie Yang, Tinglong Liu (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13325369.txt.
Description
Hua Wei and colleagues explain how sulfur and iron doping each change flaw levels in indium phosphide crystals in a 2026 study. The crystal underpins fast optical and microwave devices, and dislocations spoil its quality.
Quantum calculations showed sulfur swaps at phosphorus sites shorten and strengthen local bonds, stiffening the lattice by about 15 percent. That strain pins dislocations, and grown crystals confirmed the lowest flaw counts in heavily sulfur-doped samples. Iron did the opposite, softening the crystal and forming FeP2 precipitates past its tiny solubility limit. A tuned growth process curbed the iron fallout and evened the crystals. The contrast gives growers clear doping rules.
Catalog record
| CREATOR | Hua Wei, Hongfei Gu, Bin Yang, Xiaoda Ye, Xingkai Zhao, Hanbao Liu, Feng Qiu, Jie Yang, Tinglong Liu |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 26545 |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |