Analytical Modeling on Investigating the Electric Field Shift Behavior of GaN Vertical FinFETs
Ancy Michel, Mohd Syamsul, T. S. Arun Samuel, I. Vivek Anand, Navin M. George, D. Nirmal · 2026
Read Analytical Modeling on Investigating the Electric Field Shift Behavior of GaN Vertical FinFETs by Ancy Michel, Mohd Syamsul, T. S. Arun Samuel, I. Vivek Anand, Navin M. George, D. Nirmal (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/PMC13294903.txt.
Description
Ancy Michel and co-authors build a maths model for gallium nitride fin transistors in a 2026 article. Vertical FinFET devices made from gallium nitride suit radio-frequency and power uses, but designers need reliable physics-based models. Their model covers a narrow fin channel on a gallium nitride base with a field plate gate.
Starting from a two-dimensional charge equation, the team derived formulas for surface potential, threshold voltage, current, and on-resistance. Results were checked against detailed computer simulations of a stepped gate device. Close agreement, plus strong simulated current values, supports the formulas as a practical aid for tuning future device designs.
Catalog record
| CREATOR | Ancy Michel, Mohd Syamsul, T. S. Arun Samuel, I. Vivek Anand, Navin M. George, D. Nirmal |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 32496 |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |