Voltage compensation of manufacturing errors applied to artificial band gaps in nanoscale transistor
Ashkan Aghajani, Avi Karsenty · 2026
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Description
Ashkan Aghajani and Avi Karsenty model in 2026 a tiny transistor whose channel holds a silicon layer boxed between oxide layers, forming a quantum well that can emit light. Layer thickness sets the emission colour, yet factory batches vary in thickness, spoiling uniformity.
Their simulations suggest that gate and drain voltages can be tuned per device to offset thickness errors. Tuning shifts the energy steps inside the well and steers the light-producing transitions back on target. Benefits claimed include fewer stray currents and full compatibility with standard chip making. Longer and wider channels need enough energetic electrons for the effect to work well, the authors note.
Catalog record
| CREATOR | Ashkan Aghajani, Avi Karsenty |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 78315 |
| LICENSE | https://creativecommons.org/licenses/by/4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |