Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs
Hui Ma, Senbiao Gu, Minglong Zhai, Honggang Liu · 2026
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Description
Hui Ma and colleagues redesign carbon nanotube transistors to slash off-state leakage in a 2026 simulation study. Narrow nanotube channels leak through band-to-band tunneling when switched off, wasting standby power. Pairing small-diameter tubes with an asymmetric gate reshaped the channel's electric landscape in calibrated device models.
The design reached extremely low off current while keeping on current high, setting a record switching ratio for its device class at the larger node. Scaled to a smaller node at lower voltage, the simulated device still held an excellent ratio with strong drive. Both polarities of operation were validated in simulation. Chip designers gain a credible route toward femtoampere standby in nanotube circuits. Fabrication proof must follow, since every figure here comes from modeling rather than measured hardware.
Catalog record
| CREATOR | Hui Ma, Senbiao Gu, Minglong Zhai, Honggang Liu |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 16 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |