First-principles study of hydrogen-related defects at the a-SiO2/Si(100) interface
Hong Luo, Di Qi, Zizhao Ma, Xin Guo, Hang Zhou, Yang Liu, Xu Zuo · 2026
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Description
A peer-reviewed research article from Europe PMC (2026). During the fabrication and annealing of amorphous SiO2/Si interfaces, hydrogen is commonly introduced to passivate interfacial dangling bonds, yet it may also generate electrically active hydrogen-related defects. Here, first-principles calculations are performed to systematically investigate the structural evolution and electronic properties of hydrogen-related defects at ten representative sites within the suboxide region of an amorphous SiO2/Si(100) interface under neutral and charged conditions.
Catalog record
| CREATOR | Hong Luo, Di Qi, Zizhao Ma, Xin Guo, Hang Zhou, Yang Liu, Xu Zuo |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 70 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |