Wafer-Level Transfer of GaN-on-Si Light-Emitting Devices via SiO2–SiO2 Direct Bonding: Strain Evolution and Optoelectronic Performance
Siyi Zhang, Shuhan Zhang, Qian Fan, Xianfeng Ni, Xing Gu · 2026
Read Wafer-Level Transfer of GaN-on-Si Light-Emitting Devices via SiO2–SiO2 Direct Bonding: Strain Evolution and Optoelectronic Performance by Siyi Zhang, Shuhan Zhang, Qian Fan, Xianfeng Ni, Xing Gu (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-13209415.txt.
Description
Siyi Zhang and co-authors move light-emitting devices from one wafer to another, in a study published in 2026. The devices are green gallium nitride lights grown on silicon, but silicon soaks up their light and hides test access. Older transfer methods face heat, light, or strength limits that hurt yield.
Their method flattens the wafer surface to under a nanometer of roughness, then bonds it face down to a new base with a glass-like layer. Peeling away the thick silicon and its stressed buffer freed strain in the light layers, which sharpened output. A built-in reflector on the back helped push light out, and output rose about twofold. A rise in stray current was the trade-off. The work used full eight-inch wafers, a scale farms can use.
Catalog record
| CREATOR | Siyi Zhang, Shuhan Zhang, Qian Fan, Xianfeng Ni, Xing Gu |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 35 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |