Dirac metallic FeB2-induced low Schottky barrier and electrically tunable Schottky contact in FeB2/MoS2 van der Waals heterostructure
Tran T. Nhan, Nguyen Q. Cuong, Chuong V. Nguyen, Huynh V. Phuc · 2026
Read Dirac metallic FeB2-induced low Schottky barrier and electrically tunable Schottky contact in FeB2/MoS2 van der Waals heterostructure by Tran T. Nhan, Nguyen Q. Cuong, Chuong V. Nguyen, Huynh V. Phuc (2026) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-13159480.txt.
Description
Tran Nhan and co-authors calculate in 2026 the contact behavior of a layered material pairing a Dirac metal with a semiconductor. The pair forms a van der Waals stack, held by weak forces. Good electrical contact with low resistance is key for two-dimensional nanoelectronic devices of the future.
The stack proved stable on energy, mechanical, thermal, and dynamic grounds. It forms a contact with an ultralow electron barrier and very low tunneling resistance. Delocalized Dirac electrons and weak Fermi-level pinning explain the performance. An external field can switch the contact from Schottky to ohmic type, a useful tuning feature.
Catalog record
| CREATOR | Tran T. Nhan, Nguyen Q. Cuong, Chuong V. Nguyen, Huynh V. Phuc |
|---|---|
| YEAR | 2026 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 27 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |