Optimization Method for the Synergistic Control of DRIE Process Parameters on Sidewall Steepness and Aspect Ratio
Dandan Wang, Cheng Lei, Pengfei Ji, Zhiqiang Li, Renzhi Yuan, Jiangang Yu, Ting Liang, Zong Yao, Jialong Li · 2025
Read Optimization Method for the Synergistic Control of DRIE Process Parameters on Sidewall Steepness and Aspect Ratio by Dandan Wang, Cheng Lei, Pengfei Ji, Zhiqiang Li, Renzhi Yuan, Jiangang Yu, Ting Liang, Zong Yao, Jialong Li (2025) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-12843920.txt.
Description
Dandan Wang and eight co-authors report a 2025 study on deep reactive ion etching, a key step in carving fine structures into silicon. Two flaws limit the method: trench walls that lean instead of standing straight, and a cap on how deep a narrow trench can go. The team mapped how the main process settings shape the etched form.
Raising the bottom power step by step made walls lean one way, while lowering it made them lean the other way. More etch cycles alone hit a depth ceiling, though pairing them with rising power broke past it at the cost of uneven trench width. Tuning the ratio of coating time to etch time gave the best control. In the end, the team etched a trench 112.2 micrometers deep and only 5 wide, with a small width gap from top to bottom.
Catalog record
| CREATOR | Dandan Wang, Cheng Lei, Pengfei Ji, Zhiqiang Li, Renzhi Yuan, Jiangang Yu, Ting Liang, Zong Yao, Jialong Li |
|---|---|
| YEAR | 2025 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 19 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |