Morphology analysis of the reconstruction of nano-filaments during aborted reset operation in Cu-based ReRAM devices
Shehla Yasmeen, Aaron DiFilippo, Marius Orlowski · 2025
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Description
Shehla Yasmeen, Aaron DiFilippo, and Marius Orlowski explain a strange effect in copper-based memory devices: stopping a reset halfway makes them conduct better. Their study appeared in twenty twenty-five. The devices store data in a tiny metal filament whose shape sets the resistance.
The authors model the filament as it rebuilds under strong electric fields and intense local heating at its tip. Copper atoms drift and migrate, reshaping a cut cone into an hourglass with lower resistance. Their model matches the measured drop, up to about elevenfold for the weakest filaments. They also split the reset into two phases, strengthening then rupture. Slow voltage ramps give atoms time to move, which explains the timing effects seen in tests.
Catalog record
| CREATOR | Shehla Yasmeen, Aaron DiFilippo, Marius Orlowski |
|---|---|
| YEAR | 2025 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 50 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |