Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance
Pranaw Kumar, Syed Sadique Anwer Askari, Mukul Kumar Das · 2025
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Description
Zinc oxide transistors could serve cheap displays and sensors, but their analog behavior depends delicately on the insulating layer under the gate. Pranaw Kumar, Syed Askari, and Mukul Das modeled such thin-film transistors in 2025, checking their device model against lab data first. They then swept dielectric materials, thicknesses, and temperatures to watch key measures move.
Hafnium oxide performed best among the insulators tried, and a 120-nanometer layer of it sharpened switching and boosted mobility further. Heat was the enemy: past about 400 kelvin, traps and Fermi-level shifts eroded performance and destabilized the threshold. The authors conclude the devices shine at room temperature for analog and light-sensing circuits.
Catalog record
| CREATOR | Pranaw Kumar, Syed Sadique Anwer Askari, Mukul Kumar Das |
|---|---|
| YEAR | 2025 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 68 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |