Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range
Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta · 2025
Read Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range by Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta (2025) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-12738798.txt.
Description
Sneha Singh and co-authors designed in 2025 a gallium nitride transistor aimed at terahertz wireless hardware. The device is a gate-all-around nanosheet transistor with several channels working in parallel. A short gate underlap wrapped in a high-grade dielectric trims parasitic capacitance and short-channel misbehavior. Calibration anchored the simulations to a real fabricated device, backed by an analytic threshold model.
The numbers came out striking. Off-state leakage sat extremely low, and the on-off ratio passed ten orders of magnitude. Switching sharpness and barrier control beat the international roadmap targets for the 1.5-nanometer class. Radio-frequency analysis put the cutoff frequency above eight terahertz. The authors credit the material's fast electrons, the multichannel layout, and tight gate control together. They pitch the design for future radio front ends beyond 5G and 6G.
Catalog record
| CREATOR | Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta |
|---|---|
| YEAR | 2025 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 59 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |