Exploring p-Type Contact for Monolayer WS2 FETs Using Halogen Doping and Intermediate Layers
D Sharda Devi, Nihar R Mohapatra · 2024
Read Exploring p-Type Contact for Monolayer WS2 FETs Using Halogen Doping and Intermediate Layers by D Sharda Devi, Nihar R Mohapatra (2024) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-11683636.txt.
Description
D Sharda Devi and Nihar R Mohapatra used computer modeling to improve the electrical contacts of transistors built from a single layer of tungsten disulfide. Such devices need contacts that pass positive charge carriers well, and plain metal contacts resist this because the energy levels get pinned at the surface. The pair tested halogen atoms, iodine and fluorine, placed either inside the layer or resting on its surface.
Atoms inside the layer pushed behavior the wrong way, while atoms on the surface helped. The pinning effect still limited the gain, so the team added thin sheets of graphene or boron nitride between the layer and the metal. A fluorine-covered sheet with graphene and platinum gave a strong contact with a much lower energy barrier.
Catalog record
| CREATOR | D Sharda Devi, Nihar R Mohapatra |
|---|---|
| YEAR | 2024 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 29 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |