A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment
Fuchun Jia, Qingyuan Chang, Mengdi Li, Yungang Liu, Ziyan Lu, Jifan Zhang, Jinming Lai, Hao Lu, Yang Lu, Bin Hou, Ling Yang, Xiaohua Ma, Haiding Sun · 2024
Read A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment by Fuchun Jia, Qingyuan Chang, Mengdi Li, Yungang Liu, Ziyan Lu, Jifan Zhang, Jinming Lai, Hao Lu, Yang Lu, Bin Hou, Ling Yang, Xiaohua Ma, Haiding Sun (2024) in the Tower of Babel, a free online library of public-domain works preserved in clean, searchable text. No sign-up. The full text is served as a plain-text file at a predictable URL, where text is present: https://antarctic-labs.com/tower-of-babel/pmc-11676823.txt.
Description
Fuchun Jia and co-authors present a 2024 study of a power diode built from gallium nitride on silicon. Such diodes serve in chargers and power gear, where low loss and high voltage strength both matter. The team paired a slanted sidewall with a fluorine plasma wash. They then probed how the diode blocks current in reverse, the trait that sets its voltage limit.
The treated diodes held off 790 volts before breaking down, with low leak current. On-state loss stayed low as well, giving a strong combined score. Tests across diode sizes showed the sidewall is the main leak path. Computer models of the field inside the device credit the fluorine step for most of the gain. The work supports cheap silicon-based builds for high-power uses.
Catalog record
| CREATOR | Fuchun Jia, Qingyuan Chang, Mengdi Li, Yungang Liu, Ziyan Lu, Jifan Zhang, Jinming Lai, Hao Lu, Yang Lu, Bin Hou, Ling Yang, Xiaohua Ma, Haiding Sun |
|---|---|
| YEAR | 2024 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 17 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |