IGBT Overcurrent Capabilities in Resonant Circuits
Basil Mohammed Al-Hadithi, Miguel Jimenez, Pak Kwong Chan · 2024
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Description
Basil Mohammed Al-Hadithi and co-authors published a study in 2024 on the overcurrent capabilities of insulated gate bipolar transistors in resonant circuits. These transistors are the power switches widely used in electric vehicles and photovoltaic systems. Correct switching keeps the transistors within safe limits; beyond them, they can be destroyed.
The team built a double resonant transformer that produces very high currents. A full bridge of resonant transistors then switched those currents, with feedback control from two current sensors. The aim was to demonstrate that the transistors can exceed their maximum permissible peak current inside a resonant system. In the tests, currents exceeded the transistor's peak rating by a large margin, about 170 percent, without problems. That means resonant circuits can be designed with transistors rated below the circuit's own peak current. The authors note that this reduces both circuit cost and switching losses, bringing the losses close to zero.
Catalog record
| CREATOR | Basil Mohammed Al-Hadithi, Miguel Jimenez, Pak Kwong Chan |
|---|---|
| YEAR | 2024 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 34 KB |
| VERSION | 1.0 |
| LICENSE | CC BY 4.0 |
| RIGHTS | CC BY |
| SOURCE | Europe PMC |