Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients

Description

Ju-Hyeong Sun and co-authors grow silicon carbide crystals from crushed recycled blocks in this 2024 paper. Silicon carbide substrates serve power semiconductors, and most are grown by the physical vapor transport method. A recent report grew crystals fast using high purity material recycled from used process blocks. Crushed blocks differ from standard powder in size spread and traits, so their effect on growth needed study. The team grew crystals with crushed blocks of varied sizes as the source.

Simulations of the growth chamber showed large blocks create a steeper temperature gradient than powder, which favors rapid growth. When large blocks were stacked vertically, the team achieved good crystal quality at high growth rates, even outside tuned conditions. The authors present vertical stacking of crushed blocks as a practical way to gain speed without losing quality.

Catalog record

Source: https://europepmc.org/articles/PMC11641864