Probability Density Function for the spatial and intensity distribution of neutron-induced defects in Silicon
Fletcher, Daniel M., Hehr, Brian Douglas, Asper, Nicholas Anthony · 2025
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Description
Daniel Fletcher, Brian Hehr and Nicholas Asper of Sandia National Laboratories build probability tools for radiation damage, in report SAND2025-12355R, printed October 2025. When a neutron strikes silicon, it knocks atoms out of place and leaves a cluster of defects. In a chip, the size and position of those clusters decide whether a circuit fails. Rather than one average answer, engineers need the odds for where defects land and how hard each hit is.
The team combined three computer models: LAMMPS for atom-level dynamics, plus SRIM and MARLOWE for faster collision tracking. Their probability density functions describe recoil energies and defect patterns, including inside a FinFET transistor shape. Choices inside the models matter: the energy-loss model shifted the averages, while the composition model changed the spread. Multi-channel defects get their own treatment. The report gives device engineers ready distributions for reliability work.
Catalog record
| CREATOR | Fletcher, Daniel M., Hehr, Brian Douglas, Asper, Nicholas Anthony |
|---|---|
| YEAR | 2025 |
| COLLECTION | PAPERS |
| FORMAT | TXT |
| FILE SIZE | 113 KB |
| LICENSE | Public Domain |
| RIGHTS | PUBLIC DOMAIN |
| SOURCE | DOE OSTI |